IRF1404PBF View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
Part Name
Description
Manufacturer
IRF1404PBF Datasheet PDF : 9 Pages
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IRF1404PbF
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 121A
16
VDS= 32V
VDS= 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 175° C
100
10
TJ = 25° C
1
0.1
0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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