IRF1010EZ/S/LPbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โฮVDSS/โTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 60 โโโ โโโ
Breakdown Voltage Temp. Coefficient โโโ 0.058 โโโ
Static Drain-to-Source On-Resistance โโโ 6.8 8.5
Gate Threshold Voltage
2.0 โโโ 4.0
V
V/ยฐC
mโฆ
V
VGS = 0V, ID = 250ยตA
f Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 250ยตA
gfs
Forward Transconductance
200 โโโ โโโ S VDS = 25V, ID = 51A
IDSS
Drain-to-Source Leakage Current
โโโ โโโ 20 ยตA VDS = 60V, VGS = 0V
โโโ โโโ 250
VDS = 60V, VGS = 0V, TJ = 125ยฐC
IGSS
Gate-to-Source Forward Leakage
โโโ โโโ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
โโโ โโโ -200
VGS = -20V
Qg
Total Gate Charge
โโโ 58 86 nC ID = 51A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
โโโ 19 28
โโโ 21 32
f VDS = 48V
VGS = 10V
td(on)
Turn-On Delay Time
โโโ 19 โโโ ns VDD = 30V
tr
Rise Time
โโโ 90 โโโ
ID = 51A
td(off)
tf
Turn-Off Delay Time
Fall Time
โโโ 38 โโโ
โโโ 54 โโโ
f RG = 7.95โฆ
VGS = 10V
LD
Internal Drain Inductance
โโโ 4.5 โโโ nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
โโโ 7.5 โโโ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
โโโ 2810 โโโ
โโโ 420 โโโ
โโโ 200 โโโ
โโโ 1440 โโโ
โโโ 320 โโโ
โโโ 510 โโโ
and center of die contact
S
pF VGS = 0V
VDS = 25V
ฦ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 48V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
โโโ โโโ 84
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
โโโ โโโ 340
โโโ โโโ 1.3
integral reverse
G
f p-n junction diode.
S
V TJ = 25ยฐC, IS = 51A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
โโโ 41
โโโ 54
62
81
f ns TJ = 25ยฐC, IF = 51A, VDD = 30V
nC di/dt = 100A/ยตs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
ย
Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
ย Limited by TJmax, starting TJ = 25ยฐC, L = 0.077mH, ย Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25โฆ, IAS = 51A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
ย ISD โค 51A, di/dt โค 260A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC.
ย Pulse width โค 1.0ms; duty cycle โค 2%.
ย This value determined from sample failure population. 100%
tested to this value in production.
ย This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
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