65C7019 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
| 65C7019 Datasheet PDF : 0 Pages | |||
650VCoolMOS™C7PowerTransistor
IPW65R019C7
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Effective output capacitance, energy
related 1)
Co(er)
Effective output capacitance, time related Co(tr)
2)
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
3
-
-
-
-
-
-
Values
Unit Note/TestCondition
Typ. Max.
-
-
V
VGS=0V,ID=1mA
3.5 4
V
VDS=VGS,ID=2.92mA
-
5
50 -
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
-
100 nA VGS=20V,VDS=0V
0.017
0.040
0.019
-
Ω
VGS=10V,ID=58.3A,Tj=25°C
VGS=10V,ID=58.3A,Tj=150°C
0.45 -
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
9900 -
160 -
Unit Note/TestCondition
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=400V,f=250kHz
338 -
pF VGS=0V,VDS=0...400V
-
3320 -
pF ID=constant,VGS=0V,VDS=0...400V
-
30 -
ns
VDD=400V,VGS=13V,ID=58.3A,
RG=1.8Ω
-
27 -
ns
VDD=400V,VGS=13V,ID=58.3A,
RG=1.8Ω
-
106 -
ns
VDD=400V,VGS=13V,ID=58.3A,
RG=1.8Ω
-
5
-
ns
VDD=400V,VGS=13V,ID=58.3A,
RG=1.8Ω
Min.
-
-
-
-
Values
Typ. Max.
53 -
71 -
215 -
5.4 -
Unit Note/TestCondition
nC VDD=400V,ID=58.3A,VGS=0to10V
nC VDD=400V,ID=58.3A,VGS=0to10V
nC VDD=400V,ID=58.3A,VGS=0to10V
V VDD=400V,ID=58.3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet
6
Rev.2.1,2013-04-18
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