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HUF76419P3 데이터 시트보기 (PDF) - Fairchild Semiconductor

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HUF76419P3 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
HUF76419P3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUF76419P3, HUF76419S3S
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
1.2
ID = 250µA
1.1
1.0
0.4
-80 -40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2000
1000
CISS = CGS + CGD
COSS CDS + CGD
CRSS = CGD
100
VGS = 0V, f = 1MHz
10
0.1
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
ID = 29A
ID = 19A
ID = 10A
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
250
VGS = 4.5V, VDD = 30V, ID = 18A
tr
200
150
tf
100
td(OFF)
50
td(ON)
0
0
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
150
VGS = 10V, VDD = 30V, ID = 29A
100
tf
tr
50
td(OFF)
td(ON)
0
0
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76419P3, HUF76419S3S Rev. B
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