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HUF76419P3 데이터 시트보기 (PDF) - Fairchild Semiconductor

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HUF76419P3 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
HUF76419P3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUF76419P3, HUF76419S3S
Typical Performance Curves (Continued)
200
60
100
STARTING TJ = 25oC
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
SINGLE PULSE
TJ = MAX RATED TC = 25oC
1
1
10
10ms
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
50 VDD = 15V
40
30
20
TJ = 175oC
10
TJ = 25oC
TJ = -55oC
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
60
VGS = 10V
VGS = 5V
50
VGS = 4V
40
30
20
10
0
0
VGS = 3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 3V
TC = 25oC
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
50
ID = 10A
40
ID = 29A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
ID = 19A
30
20
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 29A
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF76419P3, HUF76419S3S Rev. B
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