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HGTP7N60B3D View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
HGTP7N60B3D 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Fairchild
Fairchild Semiconductor Fairchild
HGTP7N60B3D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
60
RG = 50, L = 2mH, VCE = 480V
50
TJ = 150oC, VGE = 10V
40
TJ = 25oC, VGE = 10V
30
TJ = 25oC, VGE = 15V
20
TJ = 150oC, VGE = 15V
10 1
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 50, L = 2mH, VCE = 480V
120
100
80
TJ = 150oC, VGE = 10V
60 TJ = 25oC, VGE = 10V
40
20
TJ = 25oC and 150oC, VGE = 15V
0
1
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 50, L = 2mH, VCE = 480V
200
TJ = 150oC, VGE = 15V
150
TJ = 150oC, VGE = 10V
100
50
1
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 50, L = 2mH, VCE = 480V
100
TJ = 150oC, VGE = 10V and 15V
80
60
TJ = 25oC, VGE = 10V and 15V
40 1
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40 DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
32 VCE = 10V
24
TC = 25oC
16
TC = 150oC
8
TC = -55oC
06
8
10
12
14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15 Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC
12
VCE = 200V
VCE = 600V
9
6
VCE = 400V
3
0
0
4
8
12
16
20
24
28
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
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