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HGTP7N60B3D View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
HGTP7N60B3D 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Fairchild
Fairchild Semiconductor Fairchild
HGTP7N60B3D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
400 TJ = 150oC, RG = 50, L = 2mH, VCE = 480V
100
TC VGE
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W, SEE NOTES
1
1
2
3
4 56
8 10
15
ICE, COLLECTOR TO EMITTER CURRENT (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
18
VCE = 360V, RG = 50, TJ = 125oC
100
14
80
ISC
10
60
6
40
tSC
2
20
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
30 PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 10V
25
20
TC = -55oC
15
10
TC = 150oC
TC = 25oC
5
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
40
30
TC = -55oC
20
TC = 150oC
TC = 25oC
10
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1600
RG = 50, L = 2mH, VCE = 480V
1200 TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 15V
800 TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
400
0
1
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
1000
RG = 50, L = 2mH, VCE = 480V
800
TJ = 150oC, VGE = 10V and 15V
600
400
200
01
TJ = 25oC, VGE = 10V and 15V
3
5
7
9
11
13
15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
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