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HGTP7N60B3D View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
HGTP7N60B3D 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Fairchild
Fairchild Semiconductor Fairchild
HGTP7N60B3D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTP7N60B3D, HGT1S7N60B3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode Both at TJ = 150oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50, L = 2mH,
Test Circuit (Figure 19)
IEC = 7A
IEC = 7A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
MIN
TYP MAX UNITS
-
24
-
ns
-
22
-
ns
-
230
295
ns
-
120
175
ns
-
310
350
µJ
-
350
500
µJ
-
1.85
2.2
V
-
-
37
ns
-
-
32
ns
-
-
2.1
oC/ W
-
-
3.0
oC/ W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
16
14
12
10
8
6
4
2
0
25
VGE = 15V
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
50
TJ = 150oC, RG = 50, VGE = 15V
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
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