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HGTP7N60B3D View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
HGTP7N60B3D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTP7N60B3D, HGT1S7N60B3DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
ALL TYPES
600
14
7
6
56
±20
±30
35A at 600V
60
0.476
-55 to 150
260
2
12
UNITS
V
A
A
A
A
V
V
W
W/ oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.
2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω .
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
BVCES IC = 250µA, VGE = 0V
600
-
-
V
ICES
VCE = BVCES
TC = 25oC
-
-
100
µA
TC = 150oC
-
-
3.0
mA
VCE(SAT) IC = IC110, VGE = 15V TC = 25oC
-
1.8
2.1
V
TC = 150oC
-
2.1
2.4
V
VGE(TH) IC = 250µA, VCE = VGE
3.0
5.1
6.0
V
IGES
VGE = ±20V
-
SSOA
TJ = 150oC, RG = 50, VCE = 480V
42
VGE = 15V, L = 100µH VCE = 600V
35
-
±100
nA
-
-
A
-
-
A
VGEP
IC = IC110, VCE = 0.5 BVCES
-
7.7
-
V
QG(ON)
td(ON)I
trI
td(OFF)I
IC = IC110,
VCE = 0. 5BVCES
VGE = 15V
VGE = 20V
IGBT and Diode Both at TJ = 25oC,
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50, L = 2mH,
Test Circuit (Figure 19)
-
23
28
nC
-
30
37
nC
-
26
-
ns
-
21
-
ns
-
130
160
ns
tfI
-
60
80
ns
EON
-
160
200
µJ
EOFF
-
120
200
µJ
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
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