FS3UM-9 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
FS3UM-9 Datasheet PDF : 5 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC=25°C
Pulse Test
32
24
ID=4A
16
3A
8
2A
1A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
TC=25°C
VDS=50V
8
Pulse Test
6
4
2
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
3
2
Ciss
102
7
5
3
Coss
2
101
7
5 Tch=25°C
Crss
f=1MHz
3 VGS=0V
2
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC=25°C
Pulse Test
8
VGS=10V
20V
6
4
2
0
10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS=10V
Pulse Test
5
3
2
TC=25°C
100
7
5
75°C
125°C
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
tf
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
102
7
5
td(off)
3
2
101
7
5
10–1
td(on)
tr
2 3 5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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