FS2ASJ-3 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
FS2ASJ-3 Datasheet PDF : 5 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
Tc = 25°C
Pulse Test
4.0
3.0
2.0
ID = 3A
2A
1.0
1A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
Tc = 25°C
VDS = 10V
Pulse Test
8
6
4
2
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
103 VGS = 0V
7 f = 1MHZ
5
Ciss
3
2
102
7
5
Coss
3
2
101
Crss
7
5
3
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
Tc = 25°C
Pulse Test
0.8
VGS = 4V
10V
0.6
0.4
0.2
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS = 5V
Pulse Test
5
4
3
2
TC = 25°C
100
75°C
7
125°C
5
4
3
2
10–110–1 2 3 4 5 7 100 2 3 4 5 7 101
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
5
VDD = 80V
3
VGS = 10V
2
RGEN = RGS = 50Ω
102
tf
7
5
3
2
td(on)
101
7
5 tr
td(off)
3
2
100
10–1 2 3 4 5 7 100 2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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