MBM29LV652UE90 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29LV652UE90

Flash memory CMOS 64M (4M x 16) bit

Fujitsu 

MBM29LV652UE90

s DEVICE BUS OPERATION

MBM29LV652UE User Bus Operations Table

Operation

CE OE WE A0 A1 A6 A9 DQ15 to DQ0 RESET

Auto-Select Manufacture Code *1

L L H L L L VID

Code

H

Auto-Select Device Code *1

L L H H L L VID

Code

H

Read *3

L

L

H A0 A1 A6 A9

DOUT

H

Standby

HXXXXXX

High-Z

H

Output Disable

L HHX X X X

High-Z

H

Write (Program/Erase)

L

H

L

A0 A1 A6 A9

DIN

H

Enable Sector Group Protection *2 *4

L VID

L H L VID

X

H

Verify Sector Group Protection *2 *4

L L H L H L VID

Code

H

Temporary Sector Group Unprotection *5

XXXXXXX

X

VID

Reset (Hardware)/Standby

XXXXXXX

High-Z

L

Legend: L = VIL, H = VIH, X = VIL or VIH. = Pulse input. See “s DC CHARACTERISTICS” for voltage levels.

*1: Manufacturer and device codes are accessed via a command register write sequence. See “MBM29LV652UE

Command Definitions Table”.

*2: Refer to the section on Sector Group Protection.

*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4: VCC = 3.3 V ± 10%

*5: Also used for the extended sector group protection.

8

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