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ES1B-T1 View Datasheet(PDF) - Won-Top Electronics

Part Name
Description
Manufacturer
ES1B-T1
WTE
Won-Top Electronics WTE
ES1B-T1 Datasheet PDF : 0 Pages
1.00
Single phase half wave
Resistive or Inductive load
0.75
0.50
0.25
0
0
30
25 50 75 100 125 150 175
TL, LEAD TEMPERATURE ( ° C)
Fig. 1 Forward Current Derating Curve
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
Tj = 25°C
10
Pulse width = 300µs
ES1A - ES1D
ES1E - ES1G
1.0
ES1J
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Tj = 25°C
f = 1.0MHz
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
ES1A – ES1J
2 of 3
© 2002 Won-Top Electronics
 

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