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DM74S473AV Ver la hoja de datos (PDF) - National ->Texas Instruments

Número de piezacomponentes DescripciónFabricante
DM74S473AV (512 x 8) 4096-Bit TTL PROM National-Semiconductor
National ->Texas Instruments National-Semiconductor
DM74S473AV Datasheet PDF : 6 Pages
1 2 3 4 5 6
AC Electrical Characteristics with Standard Load and Operating Conditions
COMMERCIAL TEMP RANGE (0 C to a70 C)
Symbol
TAA
TEA
TER
TZX
TXZ
JEDEC
Symbol
TAVQV
TEVQV
TEXQX
TEVQX
TEXQZ
Parameter
Address Access Time
Enable Access Time
Enable Recovery Time
Output Enable Time
Output Disable Time
DM74S473
Min
Typ Max
40
60
15
30
15
30
15
30
15
30
DM74S473A
Min
Typ Max
25
45
15
30
15
30
15
30
15
30
Units
ns
ns
ns
ns
ns
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
fusable links for testing the programmability of each chip
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates All test circuits are available at both wafer and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow
RELIABILITY
As with all National products the Ti-W PROMs are subject-
ed to an on-going reliability evaluation by the Reliability As-
surance Department These evaluations employ accelerat-
ed life tests including dynamic high-temperature operating
life temperature-humidity life temperature cycling and ther-
mal shock To date nearly 7 4 million Schottky Ti-W PROM
device hours have been logged with samples in Epoxy B
molded DIP (N-package) PLCC (V-package) and CERIP (J-
package) Device performance in all package configurations
is excellent
TITANIUM-TUNGSTEN FUSES
National’s Programmable Read-Only Memories (PROMs)
feature titanuim-tungsten (Ti-W) fuse links designed to pro-
gram efficiently with only 10 5V applied The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process of which the titanium-
tungsten metallization is an integral part and the use of an
on-chip programming circuit
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links At 10 5V
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies Care is
taken however to minimize voltage drops across the die
and to reduce parasitics The device is designed to ensure
that worst-case fuse operating current is low enough for
reliable long-term operation The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of VCC and temperature
4
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