Preliminary data
BUZ 102SL-4
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 6.2 A, VGS = 5 V
0.09
Ω
RDS (on)0.07
0.06
0.05
98%
0.04
typ
0.03
0.02
0.01
0.00
-60 -20
20
60 100 °C 180
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 90 µA
4.6
V
4.0
VGS(th) 3.6
3.2
2.8
2.4
98%
2.0
typ
1.6
2%
1.2
0.8
0.4
0.0
-60 -20
20
60 100 °C 180
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
C
pF
10 3
A
IF
10 2
Ciss
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
23/Oct/1997