BUZ101SL-4 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ101SL-4

SIPMOS® Power Transistor

Siemens AG 

SIPMOS ® Power Transistor

• Quad-channel

• Enhancement mode

• Logic level

• Avalanche-rated

• dv/dt rated

Preliminary data

BUZ 101SL-4

Type

VDS

BUZ 101SL-4 55 V

ID

4.1 A

RDS(on)

0.075 Ω

Package

P-DSO-28

Ordering Code

C67078-S. . . .- . .

Maximum Ratings

Parameter

Continuous drain current one channel active

TA = 25 °C

Pulsed drain current one channel active

TA = 25 °C

Avalanche energy, single pulse

ID = 4.1 A, VDD = 25 V, RGS = 25 Ω

L = 10.7 mH, Tj = 25 °C

Reverse diode dv/dt

IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

Gate source voltage

Power dissipation ,one channel active

TA = 25 °C

Operating temperature

Storage temperature

IEC climatic category, DIN IEC 68-1

Symbol

ID

IDpuls

EAS

dv/dt

VGS

Ptot

Tj

Tstg

Values

Unit

A

4.1

16.4

mJ

90

kV/µs

6

± 14

V

W

2.4

-55 ... + 175 °C

-55 ... + 175

55 / 175 / 56

Semiconductor Group

1

02/Oct/1997

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