BUZ100SL-4 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ100SL-4

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

Siemens AG 

Preliminary data

BUZ 100SL-4

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 7.4 A, VGS = 5 V

0.065

Ω

0.055

RDS (o0n).050

0.045

0.040

0.035

0.030

0.025

98%

typ

0.020

0.015

0.010

0.005

0.000

-60 -20

20

60 100 °C 180

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 130 µA

4.6

V

4.0

VGS(th) 3.6

3.2

2.8

2.4

98%

2.0

typ

1.6

2%

1.2

0.8

0.4

0.0

-60 -20

20

60 100 °C 180

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 4

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 3

C

pF

10 3

A

IF

Ciss

10 2

Coss

Crss

10 2

0

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 1

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

10 0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

01/Oct/1997

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