BU2522AX View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
| BU2522AX Datasheet PDF : 0 Pages | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2522AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB=B 1.2A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
VEB= 7.5V; IC= 0
5.0
V
1.3
V
0.25
2.0
mA
0.25 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
5
8
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