BU2515AF View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
| BU2515AF Datasheet PDF : 0 Pages | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2515AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 0.9A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0; TC=125℃
VEB= 7.5V ; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 5V
800
V
7.5
V
5.0
V
1.0
V
1.0
2.0
mA
1.0 mA
17.2
5
10.8
isc Website：www.iscsemi.cn
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