DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BU2508DF View Datasheet(PDF) - Tiger Electronic

Part Name
Description
Manufacturer
BU2508DF
TGS
Tiger Electronic TGS
BU2508DF Datasheet PDF : 1 Pages
1
TIGER ELECTRONIC CO.,LTD
Silicon Diffused Power Transistor
Product specification
BU2508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor
with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive
and collector current load variations resulting in a very low worst case dissipation.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
1500 V
Collector-Emitter Voltage
VCEO
700
V
Emitter-Base Voltage
Collector Current
VEBO
IC
6
V
8.0
A
Base Current
IB
3.5
A
Total Dissipation at
Ptot
Max. Operating Junction Temperature
Tj
45
W
150
oC
Storage Temperature
Tstg
-65~150 oC
TOP-3Fa
ELECTRICAL CHARACTERISTICS (Tcase = 25 unless otherwise specified)
Parameter
Symbol Test Conditions
Min. Typ.
Collector Cut-off Current
ICES VCB=1500V, IE=0
Emitter Cut-off Current
IEBO VEB=7.5V, IC=0
227
Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0
700
DC Current Gain
hFE(1)
hFE(2)
VCE=5.0V, IC=1.0A
VCE=1.0V, IC=4.5A
13
4
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Diode forward voltage
VCE(sat)
VBE(sat)
VF
IC=4.5A,IB=1.12A
IC=4.5A,IB=1.7A
IF=4.5A
1.6
Max. Unit
1.0 mA
mA
V
10
1.0 V
1.1 V
2.0 V
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]