BSS92 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BSS92

P-channel enhancement mode vertical D-MOS transistor

Siemens AG 

BSS 92

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 125

K/W

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = -1 mA

Zero gate voltage drain current

VDS = -240 V, VGS = 0 V, Tj = 25 °C

VDS = -240 V, VGS = 0 V, Tj = 125 °C

VDS = -60 V, VGS = 0 V, Tj = 25 °C

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = -10 V, ID = -0.15 A

V(BR)DSS

-240

VGS(th)

-0.8

IDSS

-

-

-

IGSS

-

RDS(on)

-

-

-1.5

-0.1

-10

-

-10

10

V

-

-2

µA

-1

-100

-0.2

nA

-100

Ω

20

Semiconductor Group

2

12/05/1997

Share Link: