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Part Name
Description
P-SOT89-4-2 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
P-SOT89-4-2
SIPMOS® Small-Signal-Transistor
Infineon Technologies
P-SOT89-4-2 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
Rev.
2.0
BSS87
13 Typ. gate charge
V
GS
=
f
(
Q
G
); parameter:
V
DS
,
I
D
= 0.26 A pulsed,
T
j
= 25 °C
16
V
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
291
V
12
10
8
0.2
V
DS max
0.5
V
DS max
6
0.8
V
DS max
4
2
0
0
1
2
3
4
nC
6
Q
G
276
271
266
261
256
251
246
241
236
231
226
221
216
-60 -20
20
60 100
°C
180
T
j
Page 7
201
6
-
05
-
30
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