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BSS63 查看數據表(PDF) - NXP Semiconductors.

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BSS63 PNP high-voltage transistor NXP
NXP Semiconductors. NXP
BSS63 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
PNP high-voltage transistor
Product data sheet
BSS63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C
MIN.
65
65
MAX.
110
100
6
100
100
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
IE = 0; VCB = 90 V
IE = 0; VCB = 90 V; Tj = 150 °C
IC = 0; VEB = 6 V
IC = 10 mA; VCE = 1 V
IC = 25 mA; VCE = 1 V
IC = 25 mA; IB = 2.5 mA
IC = 25 mA; IB = 2.5 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 25 mA; VCE = 5 V;
f = 100 MHz
MIN. TYP. MAX. UNIT
100 nA
50 µA
100 nA
30
30
250 mV
900 mV
3
50 85
pF
MHz
2004 Jan 16
3
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