BSS63 View Datasheet(PDF) - Diotec Semiconductor Germany
Part Name
Description
Manufacturer
BSS63 Datasheet PDF : 2 Pages
| |||
BSS 63
PNP
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BSS 63
100 V
110 V
6V
250 mW 1)
100 mA
100 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 90 V
IE = 0, - VCB = 90 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 6 V
- IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 25 mA, - IB = 2.5 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 25 mA, - IB = 2.5 mA
- VBEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
100 nA
–
–
50 :A
–
–
100 nA
–
–
250 mV
–
–
900 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
14
01.11.2003
|
|
Share Link: 