BSP123 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BSP123 Datasheet PDF : 9 Pages
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BSP 123
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
RthJS
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 72
K/W
≤ 12
E
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
100
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
0.8
1.5
Zero gate voltage drain current
IDSS
VDS = 100 V, VGS = 0 V, Tj = 25 °C
-
0.1
VDS = 100 V, VGS = 0 V, Tj = 125 °C
-
10
VDS = 20 V, VGS = 0 V, Tj = 25 °C
-
-
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
-
10
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.38 A
-
4
VGS = 4.5 V, ID = 0.38 A
-
6
-
2
1
100
10
50
6
10
Unit
V
µA
nA
nA
Ω
Semiconductor Group
2
Sep-12-1996
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