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BM29F040 View Datasheet(PDF) - Fujitsu

Part NameDescriptionManufacturer
BM29F040 FLASH MEMORY CMOS 4M (512K ×8) BIT Fujitsu
Fujitsu Fujitsu
BM29F040 Datasheet PDF : 40 Pages
First Prev 31 32 33 34 35 36 37 38 39 40
MBM29F040C-55/-70/-90
s ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Limits
Typ.
Max.
Sector Erase Time
1
8
Byte Programming Time
8
150
Chip Programming Time
4.2
10
Erase/Program Cycle
100,000
Unit
Comments
sec
Excludes 00H programming
prior to erasure
µs
Excludes system-level
overhead
sec
Excludes system-level
overhead
cycles
s TSOP(I) PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
s PLCC PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
Max.
Unit
7
8
pF
8
10
pF
8.5
10
pF
Typ.
Max.
Unit
7
8
pF
8
10
pF
8.5
10
pF
36
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