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BM29F040 View Datasheet(PDF) - Fujitsu

Part NameDescriptionManufacturer
BM29F040 FLASH MEMORY CMOS 4M (512K ×8) BIT Fujitsu
Fujitsu Fujitsu
BM29F040 Datasheet PDF : 40 Pages
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MBM29F040C-55/-70/-90
s DC CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max. Unit
ILI
Input Leakage Current
ILO
Output Leakage Current
VIN = VSS to VCC, VCC = VCC Max
VOUT = VSS to VCC, VCC = VCC Max
±1.0
µA
±1.0
µA
ILIT
A9, OE Input Leakage Current VCC = VCC Max., A9, OE = 12.0 V
50
µA
ICC1
VCC Active Current (Note 1)
CE = VIL, OE = VIH
ICC2
VCC Active Current (Note 2)
CE = VIL, OE = VIH
30
mA
45
mA
ICC3
VCC Current (Standby)
VIL
Input Low Level
VCC = VCC Max., CE = VIH
VCC = VCC Max., CE = VCC±0.3 V
–0.5
1
mA
5
µA
0.8
V
VIH
Input High Level
2.0
VCC+0.3
V
VID
Voltage for Autoselect and Sector
Protection (A9, OE) (Note 3, 4)
VCC = 5.0 V
11.5
12.5
V
VOL
VOH1
VOH2
Output Low Voltage Level
Output High Voltage Level
IOL = 12.0 mA, VCC = VCC Min
0.45
V
IOH = –2.5 mA, VCC = VCC Min
2.4
V
IOH = –100 µA
VCC–0.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Applicable to sector protection function.
4. (VID – VCC) do not exceed 9 V.
21
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