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BM29F040 View Datasheet(PDF) - Fujitsu

Part NameDescriptionManufacturer
BM29F040 FLASH MEMORY CMOS 4M (512K ร—8) BIT Fujitsu
Fujitsu Fujitsu
BM29F040 Datasheet PDF : 40 Pages
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MBM29F040C-55/-70/-90
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A16, A17 and A18) while (A6, A1, A0) = (0,
1, 0) will produce a logical โ€œ1โ€ code at device output DQ0 for a protected sector. Otherwise the device will read
00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1 and A6 are DONโ€™T CARES.
Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes.
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A16, A17 and A18) are the
sector address will produce a logical โ€œ1โ€ at DQ0 for a protected sector. See Table 3 for Autoselect codes.
Command
Sequence
Read/Reset
Table 5 MBM29F040C Command Definitions
Bus
Write
Cycles
Req'd
First Bus Second Bus
Write Cycle Write Cycle
Addr Data Addr Data
Third Bus
Write Cycle
Addr Data
Fourth Bus
Read/Write
Cycle
Addr Data
Fifth Bus
Write Cycle
Addr Data
Sixth Bus
Write Cycle
Addr Data
Read/Reset*
1 XXXH F0H โ€” โ€” โ€” โ€” โ€” โ€” โ€” โ€” โ€” โ€”
Read/Reset*
4 555H AAH 2AAH 55H 555H F0H RA RD โ€” โ€” โ€” โ€”
Autoselect
3 555H AAH 2AAH 55H 555H 90H โ€” โ€” โ€” โ€” โ€” โ€”
Byte Program
4 555H AAH 2AAH 55H 555H A0H PA PD โ€” โ€” โ€” โ€”
Chip Erase
6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H
Sector Erase
6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H
Sector Erase Suspend Erase can be suspended during sector erase with Addr (โ€œHโ€ or โ€œLโ€). Data (B0H)
Sector Erase Resume Erase can be resumed after suspend with Addr (โ€œHโ€ or โ€œLโ€). Data (30H)
Notes: 1. Address bits A11 to A18 = X = โ€œHโ€ or โ€œLโ€ for all address commands except for Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Table 2.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the
WE pulse.
SA = Address of the sector to be erased. The combination of A18, A17, and A16 will uniquely select any
sector.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of WE.
*: Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to read
mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase
Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both Read/
Reset Commands are functionally equivalent, resetting the device to the read mode.
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