BDX53B View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDX53B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX53/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX54/A/B/C
APPLICATIONS
·Power linear and switching applications
·Hammer drivers,audio amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半H导ANGE SEMICONDUCTOR BDX53
VCBO
Collector-base voltage
BDX53A
Open emitter
BDX53B
BDX53C
BDX53
VCEO
BDX53A
Collector-emitter voltage
Open base
VALUE
45
60
80
100
45
60
UNIT
V
V
BDX53B
80
BDX53C
100
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
8
A
ICM
Collector current-Pulse
12
A
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
0.2
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
2.08
UNIT
℃/W
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