BDX18 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

BDX18

PNP SILICON TRANSISTOR EPITAXIAL BASE

Unspecified 

BDX18 – BDX18N

PNP SILICON TRANSISTOR EPITAXIAL BASE

LF Large Signal Power Amplification

High Current Switching

Suitable for :

Series and shunt regulators

High Fidelity Amplifiers

Power-switching circuits

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

Ratings

Collector-Emitter Voltage

VCER

Collector-Emitter Voltage

RBE=100Ω

VEBO

Collector-Emitter Voltage

VCBO

Emitter-Base Voltage

VCEX

Collector-Emitter Voltage

VBE=+1.5 V

IC

Collector Current

IB

Base Current

PT

Power Dissipation

@ TC = 25°

TJ

Junction Temperature

TS

Storage Temperature

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

BDX18

BDX18N

Value

-60

-70

-65

-7

-100

-70

-90

-70

-15

-7

117

Unit

V

V

V

V

V

A

A

Watts

-65 to +200 °C

COMSET SEMICONDUCTORS

1/3

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