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BDW73D View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BDW73D
Iscsemi
Inchange Semiconductor Iscsemi
BDW73D Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW73/A/B/C/D
DESCRIPTION
·Collector Current -IC= 8A
·High DC Current Gain-hFE= 750(Min.)@ IC= 3A
·Complement to Type BDW74/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDW73
45
VCBO
Collector-Base
Voltage
BDW73A
60
BDW73B
80
BDW73C
100
BDW73D
120
BDW73
45
VCEO
Collector-Emitter
Voltage
BDW73A
60
BDW73B
80
BDW73C
100
BDW73D
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
IBB
Base Current-Continuous
0.3
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
2
80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
1.56
62.5
UNIT
/W
/W
isc Websitewww.iscsemi.cn
 

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