BCX52 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
BCX52 Datasheet PDF : 1 Pages
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Elektronische Bauelemente
BCX52
PNP Transistors
Plastic-Encapsulate Transistors
RoHS Compliant Product
Features
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
Power dissipation
PCM:
0.5
Collector current
ICM:
-1
Collector-base voltage
V(BR)CBO: -60
W (Tamb=25oC)
A
V
Operating and storage junction temperature range
TJ, Tstg: -55oC to +150oC
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-100µA , IE=0
IC=-10mA , IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
MIN MAX UNIT
-60
V
-60
V
-5
V
-0.1 µA
-0.1 µA
DC current gain
BCX52
BCX52-10
BCX52-16
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
hFE(1)
63
250
VCE=-2V, IC=-150mA
63
160
100 250
hFE(2)
VCE=-2V, IC= -5mA
63
hFE(3)
VCE=-2V, IC=-500mA
40
VCE(sat) IC=-500 mA, IB=-50mA
-0.5
V
VBE(ON)
IC=- 500mA, VCE=-2V
-1
V
VCE= -5V, IC= -10mA
fT
50
f = 100MHz
MHz
DEVICE MARKING
BCX52=AE BCX52-10=AG BCX52-16=AM
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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