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BCP56-16,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
BCP56-16,115
NXP
NXP Semiconductors. NXP
BCP56-16,115 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
300
hFE
(1)
200
(2)
100
(3)
006aaa080
1.6
IC
(A)
1.2
0.8
0.4
006aaa084
IB (mA) = 50 45 40 35 30
25
20
15
10
5
0
101
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 10. DC current gain as a function of collector
current; typical values
1.2
006aaa081
VBE
(V)
0.8
(1)
(2)
0.4
(3)
0
0
0.4
0.8
1.2
1.6
2.0
VCE (V)
Tamb = 25 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
1
006aaa082
VCEsat
(V)
101
(1)
(2)
(3)
0
101
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
102
101
1
10
102
103
104
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC639_BCP56_BCX56_8
Product data sheet
Rev. 08 — 22 June 2007
© NXP B.V. 2007. All rights reserved.
10 of 15
 

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