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BCP52 View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name
Description
Manufacturer
BCP52 Datasheet PDF : 2 Pages
1 2
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCB = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l IC l = 150 mA, l VCE l = 2 V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCP51 ... BCP53
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- ICB0
- ICB0
100 nA
10 µA
- IEB0
100 nA
fT
120 MHz
hFE1/hFE2
RthA
RthS
1.6
< 93 K/W 1)
< 27 K/W
BCP54 ... BCP56
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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© Diotec Semiconductor AG
 

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