BCP51 View Datasheet(PDF) - Diotec Semiconductor Germany
Part Name
Description
Manufacturer
BCP51 Datasheet PDF : 2 Pages
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BCP51 ... BCP53
BCP51 ... BCP53
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-06-26
6.5±0.2
3±0.1
4
1.65
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Type
Code
1
0.7
2.3
2
3
3.25
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25°C)
BCP51 BCP52 BCP53
45 V
60 V
80 V
45 V
60 V
100 V
5V
1.3 W 1)
1A
1.5 A
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 2 V, - IC = 5 mA
all groups
hFE
- VCE = 2 V, - IC = 150 mA
Group -6
hFE
Group -10
hFE
Group -16
hFE
- VCE = 2 V, - IC = 500 mA
all groups
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung 2)
- VCEsat
- IC = 500 mA, - IB = 50 mA
- VBE
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
25
40
–
100
63
–
160
100
–
250
25
–
–
–
–
0.5 V
–
–
1V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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