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BAT30-SLFILM View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BAT30-SLFILM Small signal Schottky diodes ST-Microelectronics
STMicroelectronics ST-Microelectronics
BAT30-SLFILM Datasheet PDF : 14 Pages
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BAT30
Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
Test conditions
C Diode capacitance
VR = 0 V, F = 1 MHz
VR = 1 V, F = 1 MHz
VR = 10 V, F = 1 MHz
Min. Typ Max. Unit
-
22
-
-
14
-
pF
-
6
-
Figure 1. Power dissipation versus average Figure 2. Average forward current versus
forward current
ambient temperature (δ = 1)
P (W)
0.175
0.150
δ=0.05 δ=0.1
δ=0.2
δ=0.5
δ=1
0.125
0.100
0.075
0.050
T
0.025
IF(AV) (A)
δ=tp/T
tp
0.000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF(AV) (A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
δ=tp/T
tp
0.00
0
25
50
Tamb (° C)
75
100
125
150
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.E+00
Zth(j-a)/Rth(j-a)
Single pulse
SOT-23
1.E-01
1.E-02
1.E-03
1.E-02
Alumine substrate
10 x 8 x 0.5 mm
tP(s)
1.E-01
1.E+00
1.E+01
1.E+02
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.E+00
Zth(j-a)/Rth(j-a)
Single pulse
SOT-323/SOD-323
1.E-01
Epoxy printed board FR4
Copper surface = 2.25 mm2
Coppr thickness = 35 µm
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00 1.E+01 1.E+02 1.E+03
Doc ID 12564 Rev 3
3/14
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