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BAS29 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
BAS29 General purpose controlled avalanche (double) diodes Philips
Philips Electronics Philips
BAS29 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
General purpose controlled avalanche
(double) diodes
Product specification
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
V(BR)R
Cd
trr
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
CONDITIONS
MIN. MAX. UNIT
see Fig.3
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
see Fig.5
VR = 90 V
VR = 90 V; Tj = 150 °C
IR = 1 mA
120
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ;
measured at IR = 3 mA; see Fig.7
750
mV
840
mV
900
mV
1
V
1.25
V
100
nA
100
µA
170
V
35
pF
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1999 May 21
4
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