ADF4360-2BCP View Datasheet(PDF) - Analog Devices
Part Name
Description
Manufacturer
ADF4360-2BCP Datasheet PDF : 24 Pages
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ADF4360-2
SPECIFICATIONS1
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter
REFIN CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency2
CHARGE PUMP
ICP Sink/Source3
High Value
Low Value
RSET Range
ICP Three-State Leakage Current
Sink and Source Current Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
VINH, Input High Voltage
VINL, Input Low Voltage
IINH/IINL, Input Current
CIN, Input Capacitance
LOGIC OUTPUTS
VOH, Output High Voltage
IOH, Output High Current
VOL, Output Low Voltage
POWER SUPPLIES
AVDD
DVDD
VVCO
AIDD 4
DIDD4
IVCO4, 5
IVCO4, 5
IRFOUT4
Low Power Sleep Mode4
B Version Unit
Conditions/Comments
10/250
0.7/AVDD
0 to AVDD
5.0
±100
MHz min/max
V p-p min/max
V max
pF max
μA max
For f < 10 MHz, use a CMOS-compatible
square wave, slew rate > 21 V/μs
AC-coupled
CMOS-compatible
8
MHz max
2.5
0.312
2.7/10
0.2
2
1.5
2
mA typ
mA typ
kΩ
nA typ
% typ
% typ
% typ
With RSET = 4.7 kΩ
1.25 V ≤ VCP ≤ 2.5 V
1.25 V ≤ VCP ≤ 2.5 V
VCP = 2.0 V
1.5
V min
0.6
V max
±1
μA max
3.0
pF max
DVDD − 0.4
500
0.4
V min
μA max
V max
CMOS output chosen
IOL = 500 μA
3.0/3.6
AVDD
AVDD
10
2.5
24.0
29.0
3.5 to 11.0
7
V min/V max
mA typ
mA typ
mA typ
mA typ
mA typ
μA typ
ICORE = 15 mA
ICORE = 20 mA
RF output stage is programmable
Rev. B | Page 3 of 24
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