74AHC1G00GV(2007) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
74AHC1G00GV Datasheet PDF : 11 Pages
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NXP Semiconductors
74AHC1G00; 74AHCT1G00
2-input NAND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
ICC
∆ICC
CI
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
-
- 1.0
-
10
-
40 µA
-
- 1.35 -
1.5
-
1.5 mA
- 1.5 10
-
10
-
10 pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions
Min
For type 74AHC1G00
tpd
propagation A and B to Y; see Figure 5 [1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
-
CL = 50 pF
-
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
CL = 50 pF
-
CPD
power
per buffer;
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[4] -
For type 74AHCT1G00
tpd
propagation A and B to Y;
delay
see Figure 5;
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
CPD
power
per buffer;
dissipation VI = GND to VCC
capacitance
[1]
[3]
-
-
[4] -
25 °C
Typ Max
4.5 7.9
6.5 11.4
3.5 5.5
4.9 7.5
17 -
3.6 6.2
5.0 7.9
18 -
−40 °C to +85 °C
Min Max
1.0
9.5
1.0
13.0
1.0
6.5
1.0
8.5
-
-
1.0
7.1
1.0
9.0
-
-
−40 °C to +125 °C Unit
Min
Max
1.0
10.5 ns
1.0
14.5 ns
1.0
7.0 ns
1.0
9.5 ns
-
-
pF
1.0
8.0 ns
1.0
10.0 ns
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
74AHC_AHCT1G00_6
Product data sheet
Rev. 06 — 30 May 2007
© NXP B.V. 2007. All rights reserved.
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