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4N32S Ver la hoja de datos (PDF) - QT Optoelectronics => Fairchildsemi

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4N32S GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS QT
QT Optoelectronics => Fairchildsemi QT
4N32S Datasheet PDF : 6 Pages
1 2 3 4 5 6
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4N29 4N30 4N31 4N32 4N33
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol Min
EMITTER
*Input Forward Voltage
(IF = 10 mA)
VF
*Reverse Leakage Current
(VR = 3.0 V)
IR
*Capacitance
(VF = 0 V, f = 1.0 MHz)
C
DETECTOR
*Collector-Emitter Breakdown Voltage
V
*Collector-Base Breakdown Voltage
(IC = 100 µA, IB = 0) BVCEO
30
(IC = 100 µA, IE = 0) BVCBO
30
*Emitter-Collector Breakdown Voltage
(IE = 100 µA, IB = 0) BVECO
5.0
*Collector-Emitter Dark Current
(VCE = 10 V, Base Open)
ICEO
DC Current Gain
(VCE = 5.0 V, IC = 500 µA)
hFE
Typ
Max
1.2
1.5
0.001
100
150
60
100
8
1
100
5000
Unit
V
µA
pF
V
V
nA
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Min
Typ
*Collector Output Current(1,2) (4N32, 4N33)
50 (500)
(4N29, 4N30) (IF = 10 mA, VCE = 10 V, IB = 0) IC (CTR) 10 (100)
(4N31)
5 (50)
*Saturation Voltage(2) (4N29, 4N30, 4N32, 4N33)
(4N31) (IF = 8.0 mA, IC = 2.0 mA) VCE(sat)
Max
Units
mA (%)
1.0
V
1.2
TRANSFER CHARACTERISTICS
AC Characteristic
Test Conditions Symbol Min
Turn-on Time(3)
Turn-off Time(3)
(4N32, 4N33) (IF = 200 mA, IC = 50 mA, VCC = 10 V)
ton
(4N29, 4N30, 4N31)
(Fig.7)
toff
Bandwidth(4,5)
BW
Typ
Max
Units
5.0
100
µs
40
30
KHz
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage(6)
(4N29, 4N30, 4N31, 4N32, 4N33)
*(4N32)
*(4N33)
Isolation Resistance(6)
Isolation Capacitance(6)
Test Conditions
(II-O 61 µA, Vrms, t = 1 min.)
VDC
VDC
(VI-O = 500 VDC)
(VI-O = , f = 1 MHz)
Symbol
VISO
RISO
CISO
Min
5300
2500
1500
Typ
1011
0.8
Max
Units
Vac(rms)
V
1
pf
4/25/00 200038B
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