4N32S View Datasheet(PDF) - QT Optoelectronics => Fairchildsemi
Part Name
Description
Manufacturer
4N32S Datasheet PDF : 6 Pages
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GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
4N29 4N30 4N31 4N32 4N33
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
SCHEMATIC
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified.)
Parameter
Symbol
TOTAL DEVICE
Storage Temperature
TSTG
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
TOPR
TSOL
PD
EMITTER
Continuous Forward Current
IF
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
VR
IF(pk)
PD
DETECTOR
Collector-Emitter Breakdown Voltage
BVCEO
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
BVCBO
BVECO
PD
Continuous Collector Current
IC
Value
-55 to +150
-55 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
4/25/00 200038B
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