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3N170-1 View Datasheet(PDF) - Linear Technology

Part Name
Description
Manufacturer
3N170-1
Linear
Linear Technology Linear
3N170-1 Datasheet PDF : 2 Pages
1 2
Linear Integrated Systems
3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
rds(on) 200
td(on) 3.0ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Current
Drain to Source
30mA
Maximum Voltages
Drain to Gate
±35V
Drain to Source
25V
Gate to Source
±35V
TO-72
BOTTOM VIEW
G 2 3D
S 1 4C
* Body tied to Case.
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
BVDSS
Drain to Source Breakdown Voltage
25
VDS(on)
Drain to Source "On" Voltage
VGS(th)
Gate to Source
Threshold Voltage
3N170
1.0
3N171
1.5
ID = 10µA, VGS = 0V
2.0
V
ID = 10mA, VGS = 10V
2.0
VDS = 10V, ID = 10µA
2.0
IGSS
Gate Leakage Current
10
pA
VGS = -35V, VDS = 0V
IDSS
Drain Leakage Current "Off"
10
nA VDS = 10V, VGS = 0V
ID(on)
gfs
rds(on)
Crss
Ciss
Cdb
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
10
1000
mA VGS = 10V, VDS = 10V
µS VDS = 10V, ID = 2.0mA, f = 1.0kHz
200
VGS = 10V, ID = 0A, f = 1.0kHz
1.3
VDS = 0V, VGS = 0V, f = 1.0MHz
5.0
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
5.0
VDB = 10V, f = 1.0MHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
 

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