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2SD1101C View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
2SD1101C
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SD1101C Datasheet PDF : 5 Pages
1 2 3 4 5
2SD1101
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
Unit
25
V
20
V
5
V
0.7
A
1
A
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 25
voltage
Collector to emitter breakdown V(BR)CEO 20
voltage
Emitter to base breakdown
V(BR)EBO
5
voltage
Collector cutoff current
I CBO
DC current transfer ratio
hFE*1
85
Collector to emitter saturation VCE(sat)
voltage
Base to emitter voltage
VBE
Notes: 1. The 2SD1101 is grouped by hFE as follows.
2. Pulse test
Grade
B
C
Mark
AB
AC
hFE
85 to 170 120 to 240
Max Unit
V
V
V
1.0 µA
240
0.5 V
1.0 V
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 0.15 A*2
IC = 0.5 A, IB = 0.05 A*2
VCE = 1 V, IC = 0.15 A*2
See characteristic curves of 2SD467.
2
 

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