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2SD0602A0L View Datasheet(PDF) - Panasonic Corporation

Part Name
Description
Manufacturer
2SD0602A0L
Panasonic
Panasonic Corporation Panasonic
2SD0602A0L Datasheet PDF : 4 Pages
1 2 3 4
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0602A
Silicon NPN epitaxial planar type
For general amplication
Complementary to 2SB0710A
Features
Low collector-emitter saturation voltage VCE(sat)
Mini type package, allowing downsizing of the equipment and automatic
/ insertion through the tape packing.
e Absolute Maximum Ratings Ta = 25°C
e. Parameter
Symbol Rating
Unit
nc d stag Collector-base voltage (Emitter open)
VCBO
60
V
cle Collector-emitter voltage (Base open)
VCEO
50
V
a e lifecy Emitter-base voltage (Collector open)
VEBO
5
V
ct Collector current
IC
500
mA
n u rodu Peak collector current
te tin r P Collectorpowerdissipation
fou Junction temperature
ICP
1
A
PC
200
mW
Tj
150
°C
wing type tion. Storage temperature
Tstg –55 to +150 °C
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: X
in nes follotenancetype typed forma / Electrical Characteristics Ta = 25°C±3°C
a coed incluedd maintenancetinued type test in .jp/en Parameter
Symbol
Conditions
Min Typ Max Unit
u n in on d t la .co Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
V
M is tin la a isc ue ou nic Collector-emitter voltage (Base open)
VCEO IC = 10 mA, IB = 0
50
V
on p m d d ntin ab aso Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
5
V
isc lane isco URL .pan Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
e/D p d ing icon Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 150 mA
85
Danc llow m hFE2 VCE = 10 V, IC = 500 mA
40
inten it fo w.se Collector-emitter saturation voltage *1
VCE(sat) IC = 300 mA, IB = 30 mA
Ma e vis ://ww Transition frequency
fT VCB = 10 V, IE = -50 mA, f = 200 MHz
as ttp Collector output capacitance
Ple h (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
mA
340
0.35 0.60
V
200
MHz
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Product of no-rank is not classied and have no indication for rank.
Publication date: October 2008
SJC00191DED
1
 

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