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2SC4027L-X-TN3-T View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
2SC4027L-X-TN3-T
UTC
Unisonic Technologies UTC
2SC4027L-X-TN3-T Datasheet PDF : 5 Pages
1 2 3 4 5
2SC4027
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
2.5
A
TO-220
TA=25°C TO-252
Collector Dissipation
TO-220
PC
TC=25°C TO-252
2
W
1
65
W
15
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
„ CLASSIFICATION OF hFE1
SYMBOL
TEST CONDITIONS
BVCBO IC=10A, IE=0
BVCEO IC =1mA, RBE=
BVEBO IE=10μA, IC =0
VCE(SAT) IC =500mA, IB=50mA
VBE(SAT) IC =500mA, IB=50mA
ICBO VCB=120V, IE=0
IEBO VEB=4V, I IC =0
hFE1 VCE=5V, IC =100mA
hFE2 VCE=5V, IC =10mA
fT
VCE=10V, IC =50mA
COB VCB=-10V, f=1MHz
TON See specified Test Circuit
TSTG
tF
MIN TYP MAX UNIT
180
V
160
V
6
V
0.13 0.45 V
0.85 1.2 V
1.0 μA
1.0 μA
100
400
80
120
MHz
12
pF
60
μs
1.2
μs
80
μs
RANK
RANGE
R
100~200
S
140~280
T
200~400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-018.C
 

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