2SC3356 View Datasheet(PDF) - Secos Corporation.

Part Name

Description

Manufacturer

2SC3356

NPN Silicon Plastic-Encapsulate Transistor

Secos Corporation. 

Elektronische Bauelemente

2SC3356

NPN Silicon

Plastic-Encapsulate Transistor

A suffix of "-C" specifies halogen & lead-free

FEATURES

n Power Dissipation

n RoHS Compliant Product

3.COLLECTOR

1.BASE

2.EMITTER

V

A

L

3

Top View

1

2

G

BS

D

MAXIMUM RATINGS* TA=25oC unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

IC

Emitter-Base Voltage

Collector Current -Continuous

PC

TJ, Tstg

Collector Dissipation

Junction and Storage Temperature

C

H

K

SOT-23

Dim Min Max

A 2.800 3.040

B 1.200 1.400

C 0.890 1.110

D 0.370 0.500

G 1.780 2.040

H 0.013 0.100

J 0.085 0.177

K 0.450 0.600

L 0.890 1.020

S 2.100 2.500

V 0.450 0.600

J

All Dimension in mm

Value

20

12

3

0.1

0.2

-55~150

Units

V

V

V

A

W

oC

ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified )

Parameter

Symbol

Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=10µA, IE=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA, IB=0

12

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

3

Collector cut-off current

ICBO

VCB= 10 V , IE=0

V

1

µA

Emitter cut-off current

IEBO

VEB= 1V , IC=0

1

µA

DC current gain

hFE

VCE= 10V, IC= 20mA

50

300

Transition frequency

fT

VCE=10V, IC= 20mA

6

GHz

Noise figure

F

VCE=10V, IC= 7mA, f = 1GHz

2

dB

CLASSIFICATION OF hFE

Marking

R23

R24

R25

Rank

Q

R

S

Range

50-100

80-160

125-250

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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