2SC3117 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SC3117

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

V(BR)EBO Emitter-base breakdown voltage

IC=10μA; IE=0

IE=10μA ; IC=0

VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA

VBEsat Base-emitter saturation voltage

IC=500mA; IB=50mA

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE-1

DC current gain

IC=100mA ; VCE=5V

hFE-2

DC current gain

IC=10mA ; VCE=5V

fT

Transition frequency

IC=50mA ; VCE=10V

Cob

Output capacitance

IE=0 ; VCB=10V;f=1MHz

‹ hFE-1 Classifications

R

S

T

100-200 140-280 200-400

Product Specification

2SC3117

MIN TYP. MAX UNIT

160

V

180

V

6

V

0.13 0.45

V

0.85 1.2

V

1.0 μA

1.0 μA

100

400

90

120

MHz

22

pF

2

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