Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1μA; IC=0
VCEsat Collector-emitter saturation voltage IC=20mA; IB=2mA
VBEsat Base-emitter saturation voltage
IC=20mA; IB=2mA
ICEO
Collector cut-off current
VCE=200V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=10mA ; VCE=10V
fT
Transition frequency
IC=10mA ; VCE=20V
Product Specification
2SC1102
MIN TYP. MAX UNIT
300
V
5
V
1.0
V
1.5
V
1
μA
1
μA
40
200
60
MHz
2