2SC1102 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC1102

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1μA; IC=0

VCEsat Collector-emitter saturation voltage IC=20mA; IB=2mA

VBEsat Base-emitter saturation voltage

IC=20mA; IB=2mA

ICEO

Collector cut-off current

VCE=200V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=10mA ; VCE=10V

fT

Transition frequency

IC=10mA ; VCE=20V

Product Specification

2SC1102

MIN TYP. MAX UNIT

300

V

5

V

1.0

V

1.5

V

1

μA

1

μA

40

200

60

MHz

2

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