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2SC1008-R View Datasheet(PDF) - Secos Corporation.

Part Name
Description
Manufacturer
2SC1008-R Datasheet PDF : 1 Pages
1
Elektronische Bauelemente
2SC1008
0.7A , 80 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
CLASSIFICATION OF hFE
Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G
Range
40~80
70~140 120~240 200~400
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
80
60
8
0.7
800
156
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
80
Collector to Emitter Breakdown Voltage V(BR)CEO
60
Emitter to Base Breakdown Voltage
V(BR)EBO
8
Collector Cut-Off Current
ICBO
-
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE
40
Collector to Emitter Saturation Voltage
VCE(sat)
-
Base to Emitter Voltage
VBE(sat)
-
Transition Frequency
fT
30
Collector Output Capacitance
Cob
-
-
-
V IC=0.1mA, IE=0
-
-
V IC=10mA, IB=0
-
-
V IE=0.01mA, IC=0
-
0.1
μA VCB=60V, IE=0
-
0.1
μA VEB=5V, IC=0
-
400
VCE=2V, IC=50mA
-
0.4
V IC=500mA, IB=50mA
-
1.1
V IC=500mA, IB=50mA
-
-
MHz VCE=10V, IC=50mA
8
-
pF VCB=10V, IC=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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