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B1412 View Datasheet(PDF) - Unisonic Technologies

Part NameB1412 UTC
Unisonic Technologies UTC
DescriptionHIGH VOLTAGE SWITCHING TRANSISTOR
B1412 Datasheet PDF : 5 Pages
1 2 3 4 5
2SB1412
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current(DC)
IC
-5
A
Collector Current(PULSE) Single pulse, Pw=10ms
ICP
-10
A
Collector Power Dissipation
PD
1
W
Collector Power Dissipation (note2)
PD
10(TC=25°C)
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Base Breakdown Voltage BVCBO IC= -50μA
Collector Emitter Breakdown Voltage BVCEO IC= -1mA
Emitter Base Breakdown Voltage
BVEBO IE= -50μA
Collector Cut-Off Current
ICBO VCB= -20V
Emitter Cut-Off Current
IEBO VEB= -5V
DC Current Transfer Ratio
hFE VCE= -2V,Ic= -0.5A
Collector-Emitter Saturation Voltage VCE(SAT) IC/IB= -4A/-0.1A
Transition Frequency
fT VCE= -6V, IE= 50 mA, f=30MHz
Output Capacitance
COB VCB= -20V, IE= 0 A, f=1MHz
„ CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
MIN TYP MAX UNIT
-30
V
-20
V
-6
V
-0.5 μA
-0.5 μA
82
390
-1.0 V
120
MHz
60
pF
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-021.B
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